Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation

  • Authors:

  • Sona P. Kumar;Anju Agrawal;Rishu Chaujar;Sneha Kabra;Mridula Gupta;R. S. Gupta

  • Affiliations:

  • Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110021, India;Department of Electronics, Acharya Narendra Dev College, Kalkaji, New Delhi 110019, India;Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110021, India;Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110021, India;Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110021, India;Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110021, India

  • Venue:
  • Microelectronics Journal
  • Year:
  • 2007

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Abstract

A simple and accurate analytical model for the threshold voltage of AlGaN/GaN high electron mobility transistor (HEMT) is developed by solving three-dimensional (3-D) Poisson equation to investigate the short channel effects (SCEs) and the narrow width effects present simultaneously in a small geometry device. It has been demonstrated that the proposed model correctly predicts the potential and electric field distribution along the channel. In the proposed model, the effect of important parameters such as the thickness of the barrier layer and its doping on the threshold voltage has also been included. The model is, further, extended to find an expression for the threshold voltage in the sub-micrometer regime. The accuracy of the proposed analytical model is verified by comparing the model results with 3-D device simulations for different gate lengths and widths.