High Linearity RF Amplifier Design
High Linearity RF Amplifier Design
A state-space behavioral model for CMOS class E power amplifiers
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Design of integrated 1.6 GHz, 2 W tuned RF power amplifier
Analog Integrated Circuits and Signal Processing
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This paper describes advantages and characteristics of a class E power amplifier when used in a polar transmitter system. Basic principles of class E operation and information about different nonlinearities are given. Also, modifying the transistor model for switch-mode use is discussed briefly. A 1 GHz, 0.5 W class E power amplifier was implemented for a polar transmitter. Performance measurements of a total transmitter system with and without predistortion are presented.