Characteristics of DC magnetron sputtered ternary cobalt-nickel silicide thin films for ultra shallow junction devices

Authors:
D. Panda;A. Dhar;S. K. Ray
Affiliations:
Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India;Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India;Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India
Venue:
Microelectronic Engineering
Year:
2008

Citing 2
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Abstract

Ternary cobalt-nickel silicide thin films were synthesized by DC magnetron sputtering from an equiatomic cobalt-nickel alloy target. Grazing incidence XRD, Rutherford back scattering, high-resolution cross-sectional TEM analysis and electrical study were carried out to investigate the formation of silicide, stoichiometry, film thickness, depth profile and sheet resistance of as-deposited and post-deposition annealed films. The ternary silicide layer thickness was calculated from RBS simulated data, which was found to vary 20-43nm for as-deposited and different vacuum annealed films. A minimum value of sheet resistance 2.73@W/sq corresponding to a resistivity of ~8.4@m@W-cm was obtained for optimized deposition and annealing conditions.