The processor-memory bottleneck: problems and solutions
Crossroads - Computer architecture
Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices
Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices
Exploitation of optical interconnects in future server architectures
IBM Journal of Research and Development - POWER5 and packaging
IEEE Spectrum
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A novel type of memory based on self-organized quantum dots (QDs)is proposed in the first part of this article. The future QD-Flashwill merge the advantages of the classical dynamic random accessmemory (DRAM) and the Flash to a non-volatile memory with fastaccess times (1015write/erase cycles). In a first step towards a QD-Flash, wedemonstrate here a hole retention time of 1.6s at room temperaturein InAs/GaAs QDs with an additionalAl0.9Ga0.1As barrier. This value is alreadymore than three orders of magnitude longer than the refresh time ina DRAM memory. A retention time of more than 10 years is predictedfor (InGa)Sb QDs in an AlAs matrix. In the second part, wedemonstrate vertical-cavity surface-emitting lasers based on thesubmonolayer deposition growth mode of InAs, operating error freeat 20Gbit/s between 25 and 85°C with a bit-error-rate below10-12. Their peak differential efficiency decreases onlyfrom 0.7W/A at 25°C to 0.6W/A at 85°C.