Asymptotic methods for metal oxide semiconductor field effect transistor modeling
SIAM Journal on Applied Mathematics
The lifting scheme: a construction of second generation wavelets
SIAM Journal on Mathematical Analysis
Solution of multiscale partial differential equations using wavelets
Computers in Physics
Discrete Multiresolution Analysis Using Hermite Interpolation: Biorthogonal Multiwavelets
SIAM Journal on Scientific Computing
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Miniaturisation of integrated circuits continues to shrink device lengths to such an extent that quantum tunnelling and confinement effects change the behaviour of MOSFET devices. In this paper, we present a methodology by which to model the gate region of an n-Metal Oxide Semiconductor (MOS) device using a simplified version of the density-gradient equations. The resulting singularly perturbed ODEs are solved using an adaptive wavelet collocation method that adapts dynamically to the boundary layer. Our results are shown to be in good agreement with those from a direct numerical solution of the Schrodinger-Poisson system.