Improvements to the alignment process in a commercial vector scan electron beam lithography tool

Authors:
K. E. Docherty;S. Thoms;P. Dobson;J. M. R. Weaver
Affiliations:
Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering,University of Glasgow, Glasgow G12 8LT, UK;Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering,University of Glasgow, Glasgow G12 8LT, UK;Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering,University of Glasgow, Glasgow G12 8LT, UK;Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering,University of Glasgow, Glasgow G12 8LT, UK
Venue:
Microelectronic Engineering
Year:
2008

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Abstract

This paper examines the desirable properties of marker patterns for use in correlation-based alignment systems and demonstrates alignment accuracies of better than 1nm. A framework for evaluating different classes of marker patterns has been developed and a figure of merit for marker patterns used in correlation-based alignment has been defined. We show that Penrose tilings have many desirable properties for correlation-based alignment. An alignment system based on correlation and using marker patterns derived from Penrose tilings has been developed and implemented on a commercial Vistec VB6 UHR EWF electron beam lithography tool. A new method of measuring alignment at the sub-nm level using overlaid gratings and a Fourier Transform based analysis scheme is introduced.