Thermal stability of Ni silicide films on heavily doped n+ and p+ Si substrates

  • Authors:

  • Parhat Ahmet;Takashi Shiozawa;Koji Nagahiro;Takahiro Nagata;Kuniyuki Kakushima;Kazuo Tsutsui;Toyohiro Chikyow;Hiroshi Iwai

  • Affiliations:

  • Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midoriku, Yokohama 226-8502, Japan;Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midoriku, Yokohama 226-8502, Japan;Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midoriku, Yokohama 226-8502, Japan;Advanced Electric Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midoriku, Yokohama 226-8502, Japan;Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midoriku, Yokohama 226-8502, Japan;Advanced Electric Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midoriku, Yokohama 226-8502, Japan

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 2008

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Abstract

Electrical and structural properties of Ni silicide films formed at various temperatures ranged from 200^oC to 950^oC on both heavily doped n^+ and p^+ Si substrates were studied. It was found that surface morphology as well as the sheet resistance properties of the Ni silicide films formed on n^+ and p^+ Si substrates at the temperatures higher than 600^oC were very different. Agglomerations of Ni silicide films on n^+ Si substrates begin to occur at around 600^oC while there is no agglomeration observed in Ni silicide films on p^+ Si substrates up to a forming temperature of 700^oC. It was also found that the phase transition temperature from NiSi phase to NiSi"2 phase depend on substrate types; 900^oC for NiSi film on n^+ Si substrate and 750^oC for NiSi film on p^+ Si substrate, respectively. Our results show that the agglomeration is, especially, important factor in the process temperature dependency of the sheet resistance of Ni silicides formed on n^+ Si substrates.