Modeling of GaAs MEMS for RF power measurement in telecommunications

  • Authors:
  • Jiri Jakovenko;Miroslav Husak

  • Affiliations:
  • Dept. of Microelectronics, Czech Technical University in Prague, Prague, Czech Republic;Dept. of Microelectronics, Czech Technical University in Prague, Prague, Czech Republic

  • Venue:
  • TELE-INFO'05 Proceedings of the 4th WSEAS International Conference on Telecommunications and Informatics
  • Year:
  • 2005

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Abstract

This report discusses the design of Thermo-mechanical converter that creats heart of the RF power sensor microsystem which can be used for transmitted power measurement in telecommunications. The coception of absorbed power measurement is based on thermal conversion, where absorbed RF power is transformed into thermal power, inside a thermally isolated system. Micromechanical Thermal Converter (MTC) spatial temperature dependences, thermal time constant and power to temperature characteristics are calculated from the heat distribution. The temperture changes induced in the MTC by electrical power dissipated in the HEMT (High Electron Mobility Tranzistor) are sensed using the temperature sensor. The temperature distribution, over the sensing area, and mechanical stress was optimized by studying different MTC sizes, and layouts of the heater and temperature sensor.