3D level set anysotropic etching profile evolution simulations

  • Authors:
  • Branislav Radjenovic

  • Affiliations:
  • Institute of Physics, Belgrade, Serbia

  • Venue:
  • ELECTROSCIENCE'08 Proceedings of the 6th WSEAS International Conference on Applied Electromagnetics, Wireless and Optical
  • Year:
  • 2008

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Abstract

Level set method, introduced by Osher and Sethian, is a highly robust and accurate computational technique for tracking of moving interfaces in etching, deposition and photolithography processes. It originates from the idea to view the moving front as a particular level set of a higher dimensional function, so the topological merging and breaking, sharp gradients and cusps can form naturally, and the effects of curvature can be easily incorporated. The corresponding equations of motion for the propagating surfaces, which resemble Hamilton-Jacobi equations with parabolic right-hand sides, can be solved using methods for solving hyperbolic conservation laws, ensuring in that the way correct entropy-satisfying solution. In this paper we describe an application of the sparse field method for solving level set equations in 3D anisotropic wet etching of silicon with potassium hydroxide (KOH). Angular dependence of the silicon etching rate is determined on the basis of the silicon crystal symmetry properties. Some examples illustrating developed methodology are given.