RF Power Amplifiers for Wireless Communications, Second Edition (Artech House Microwave Library (Hardcover))
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A new inverse class E power amplifier circuit is proposed. Instead of using a bias choke, the bias current is fed through a resonating inductor of the output network. The circuit is particularly suitable for full integration, since removal of the bias choke removes some of the largest parasitic circuit elements of the output network. The new parasitic capacitances are not connected to signal nodes, and have at least one node connected to ground. The DC blocking capacitor is located between the amplifier output and the load, which allows it to be placed outside an integrated circuit. The DC block may be omitted, if it is acceptable to connect DC voltage to the load. The circuit is suitable for envelope modulation, and it is compatible with many known predistorting and efficiency enhancement methods.