A simulation model for chemically amplified resist CAMP6

  • Authors:

  • Katia Vutova;Elena Koleva;Georgy Mladenov;Ivan Kostic;Takeshi Tanaka;Keishi Kawabata

  • Affiliations:

  • Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko shosse, 1784 Sofia, Bulgaria;Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko shosse, 1784 Sofia, Bulgaria;Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko shosse, 1784 Sofia, Bulgaria;Institute of Informatics, SAS, 9 Dubravska cesta, 845 07 Bratislava, Slovak Republic;Hiroshima Institute of Technology, 2-1-1 Miyake Saeki-ku, 731-5193 Hiroshima, Japan;Hiroshima Institute of Technology, 2-1-1 Miyake Saeki-ku, 731-5193 Hiroshima, Japan

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 2009

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Abstract

In this paper, a model for computer simulation of the exposure and the development of the CAMP6 chemically amplified resist (CAR) during electron beam lithography is proposed. The distribution of the absorbed electron energy in the exposed resist is determined using our Monte Carlo algorithm and computer programs. A wider resist de-protection region due to the diffusion of the exposure catalyst product (acid) during the post-exposure bake (PEB) is estimated. It lays a special emphasis upon the development process simulation. Experimentally obtained time dependent macroscopic characteristics of the development (contrast curves, the development rate vs. the exposure dose) are taken into account, aiming to avoid the need for further calibration. The proposed model demonstrates qualitative agreement with the development kinetics of the resist developed profiles for the studied CAR.