The determination of the bipolar transistor commutation time components by using a virtual circuit

  • Authors:

  • Floarea Baicu;Nicolae Popoviciu

  • Affiliations:

  • Hyperion University of Bucharest, Faculty of Mathematics-Informatics, Bucharest, Romania;Hyperion University of Bucharest, Faculty of Mathematics-Informatics, Bucharest, Romania

  • Venue:
  • MACMESE'08 Proceedings of the 10th WSEAS international conference on Mathematical and computational methods in science and engineering
  • Year:
  • 2008

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Abstract

The paper describes a series of theoretical aspects referring to the bipolar transistor commutation mode, the physical parameters having influence over the value of the commutation time and proposes a measuring method for the delay, storage, falling and hoisting times. The commutation time of bipolar transistor components represents the determinant of the memories processing speed. The proposed method is one at the disposal of students who study the semiconductors, allowing the determination of the commutation time components in order to correlate the microscopic physical parameters of the bipolar transistor (e.g.τ) with the macroscopic ones.