Highly efficient monolithic class E SiGe power amplifier design at 900 and 2400 MHz

  • Authors:

  • Donald Y. C. Lie;Jerry Lopez;Jeremy D. Popp;Jason F. Rowland;Guogong Wang;Guoxuan Qin;Zhenqiang Ma

  • Affiliations:

  • Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX and Dynamic Research Corporation, San Diego, CA;Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX and Dynamic Research Corporation, San Diego, CA;Orora Design Technologies, Inc., Redmond, WA;SPAWAR System Center, San Diego, CA;Freescale Semiconductor, Tempe, AZ and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI;Department of Electrical and Computer Engineering, University of Wisconsin-Madison, WI;Department of Electrical and Computer Engineering, University of Wisconsin-Madison, WI

  • Venue:
  • IEEE Transactions on Circuits and Systems Part I: Regular Papers
  • Year:
  • 2009

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Abstract

This paper discusses the impact of transistor performance and operating frequency on the design of monolithic highly efficient RF SiGe power amplifiers (PAs) using on-chip lump-element passives and/or bondwires to approximate the class E switching conditions. Single-stage SiGe PAs were designed and fabricated using both high-breakdown and high-fT devices targeting for the highest power-added-efficiency (PAE). The PAs designed using high-breakdown devices with on-chip tank inductors exhibit similar gain and PAE as those of high-fT devices, but capable of withstanding significantly higher supply voltages and deliver larger output power (