On the maximum likelihood method of identification

  • Authors:
  • T. Bohlin

  • Affiliations:
  • IBM Nordic Laboratory, Lidingö, Sweden

  • Venue:
  • IBM Journal of Research and Development
  • Year:
  • 1970

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Abstract

A series of passivating and masking films was developed and evaluated for use in a Ge planar transistor technology. In the search for satisfactory films, silicon dioxide, aluminum oxide, silicon nitride and multilayer combinations of these films, as ...