Semiconductor analysis using finite elements: part I: computational aspects

  • Authors:

  • G. D. Hachtel;M. H. Mack;R. R. O'Brien;B. Speelpenning

  • Affiliations:

  • IBM Thomas J. Watson Research Center, Yorktown Heights, New York;IBM Thomas J. Watson Research Center, Yorktown Heights, New York;IBM General Technology Division Laboratory, Hopewell Junction, New York;Hewlett Packard Corporation, Computer Systems Division, Cupertino, California

  • Venue:
  • IBM Journal of Research and Development
  • Year:
  • 1981

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Abstract

The FIELDAY program simulates semiconductor devices of arbitrary shape in one, two, or three dimensions operating under transient or steady-state conditions. A wide variety of physical effects, important in bipolar and field-effect transistors, can be ...