Wide-band 0.25µm CMOS passive mixer

  • Authors:

  • Ivy Lo;Xiaoyue Wang;Olga Boric-Lubecke;Yunpyo Hong;Chenyan Song

  • Affiliations:

  • Dept. of EE, University of Hawaii at Manoa, Honolulu, HI;Texas Instruments, San Diego, CA;Dept. of EE, University of Hawaii at Manoa, Honolulu, HI;Dept. of EE, University of Hawaii at Manoa, Honolulu, HI;Dept. of EE, University of Hawaii at Manoa, Honolulu, HI

  • Venue:
  • RWS'09 Proceedings of the 4th international conference on Radio and wireless symposium
  • Year:
  • 2009

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Abstract

This paper describes a wide-band resistive ring mixer fully integrated in 0.25µm CMOS process. This mixer exhibits broadband RF impedance matching with return loss better than -10 dB from 2.2 to 8.3 GHz, and better than -15 dB from 3 to 6.2 GHz. The best conversion loss (CL) of 6.4 dB is achieved at 3.2 GHz. The input P1dB is better than 4 dBm, and the IIP3 is better than 11.4 dBm over the entire RF bandwidth of 2-9 GHz. Compared to other published CMOS wide-band resistive mixers, this mixer achieves the best linearity between 2 and 9 GHz. In addition, with a small gate bias a moderate CL is achieved at very low LO power levels.