Nickel silicide formation by electroless technique for ULSI technology

Authors:
Anuj Kumar;Mukesh Kumar;Amanpal Singh;Satinder Kumar;Dinesh Kumar
Affiliations:
Electronic Science Department, Kurkshetra University, Kurkshetra 13611, India;Electronic Science Department, Kurkshetra University, Kurkshetra 13611, India;Electronic Science Department, Kurkshetra University, Kurkshetra 13611, India;Nano Science and Nano Technology Unit, IIT, Kanpur 208016, India;Electronic Science Department, Kurkshetra University, Kurkshetra 13611, India
Venue:
Microelectronic Engineering
Year:
2010

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Abstract

In this paper we report on the formation of nickel silicide by electroless process. The nickel plating solution was composed of a mixture of NiSO"4.6H"2O, NaH"2PO"2.H"2O, Na"3C"6H"5O"7, and NH"4Cl, where NiSO"4.6H"2O is the main nickel source and NaH"2PO"2.H"2O is the reducing agent. The nickel silicide formation was carried out by heating the deposited samples in vacuum at temperatures from 100^oC to 800^oC. The evolution of NiSi phase from the nickel film was verified using the X-ray diffraction technique and Raman spectroscopy. The surface morphology was studied using AFM technique. The electroless plating technique can provide a cheap and easy process for forming nickel silicide, and has potentiality of application for the electronic device industries.