Rare earth-based high-k materials for non-volatile memory applications

  • Authors:

  • M. Alessandri;A. Del Vitto;R. Piagge;A. Sebastiani;C. Scozzari;C. Wiemer;L. Lamagna;M. Perego;G. Ghidini;M. Fanciulli

  • Affiliations:

  • Numonyx Italy S.r.l., Via C. Olivetti, 2, 20041 Agrate Brianza (MI), Italy;Numonyx Italy S.r.l., Via C. Olivetti, 2, 20041 Agrate Brianza (MI), Italy;Numonyx Italy S.r.l., Via C. Olivetti, 2, 20041 Agrate Brianza (MI), Italy;Numonyx Italy S.r.l., Via C. Olivetti, 2, 20041 Agrate Brianza (MI), Italy;Numonyx Italy S.r.l., Via C. Olivetti, 2, 20041 Agrate Brianza (MI), Italy;Laboratorio Nazionale MDM, CNR INFM, Via C. Olivetti, 2, 20041 Agrate Brianza (MI), Italy;Laboratorio Nazionale MDM, CNR INFM, Via C. Olivetti, 2, 20041 Agrate Brianza (MI), Italy;Laboratorio Nazionale MDM, CNR INFM, Via C. Olivetti, 2, 20041 Agrate Brianza (MI), Italy;Numonyx Italy S.r.l., Via C. Olivetti, 2, 20041 Agrate Brianza (MI), Italy;Laboratorio Nazionale MDM, CNR INFM, Via C. Olivetti, 2, 20041 Agrate Brianza (MI), Italy and Dipartimento di Scienza dei Materiali, Universití degli Studi Milano-Bicocca, 20125 Milano, Italy

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 2010

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Abstract

A study of a La-based high-k oxide to be employed as active dielectric in future scaled memory devices is presented. The focus will be held on La"xZr"1"-"xO"2"-"@d (x=0.25) compound. In order to allow the integration of this material, its chemical interaction with an Al"2O"3 cap layer has been studied. Moreover, the electrical characteristics of these materials have been evaluated integrating them in capacitor structures. The rare earth-based ternary oxide is demonstrated to be a promising candidate for future non-volatile memory devices based on charge trapping structure.