Diffusion barrier performance of W/Ta-W-N double layers for Cu metallization

  • Authors:

  • Shuangxi Song;Yuzhang Liu;Ming Li;Dali Mao;Chengkang Chang;Huiqin Ling

  • Affiliations:

  • State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, 1954 Huashan Road, Shanghai 200030, PR China;State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, 1954 Huashan Road, Shanghai 200030, PR China;State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, 1954 Huashan Road, Shanghai 200030, PR China;State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, 1954 Huashan Road, Shanghai 200030, PR China;State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, 1954 Huashan Road, Shanghai 200030, PR China;State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, 1954 Huashan Road, Shanghai 200030, PR China

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 2006

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Abstract

In this work, the properties of Cu/W/Ta-W-N/Si film stacks were studied. Adding a thin W layer to a stable Ta-W-N diffusion barrier significantly affected the whole metallization system. The introduction of a thin W interlayer caused a significant change of the system while increasing the stability of the film. The tandem barrier was demonstrated to be stable up to 800^oC by the performed analytical barrier tests.