Ultra-high density MEMS probe memory device

  • Authors:

  • John Heck;Donald Adams;Nickolai Belov;Tsung-Kuan A. Chou;Byong Kim;Kevin Kornelsen;Qing Ma;Valluri Rao;Simone Severi;Dean Spicer;Ghassan Tchelepi;Ann Witvrouw

  • Affiliations:

  • Intel Corporation, MS SC9-09, 2200 Mission College Blvd., Santa Clara, CA 95052, United States;Nanochip, Inc, United States;Nanochip, Inc, United States;Intel Corporation, MS SC9-09, 2200 Mission College Blvd., Santa Clara, CA 95052, United States;Nanochip, Inc, United States;Micralyne Inc., 1911 94 St. NW, Edmonton, AB T6N, Canada;Intel Corporation, MS SC9-09, 2200 Mission College Blvd., Santa Clara, CA 95052, United States;Intel Corporation, MS SC9-09, 2200 Mission College Blvd., Santa Clara, CA 95052, United States;IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium;Micralyne Inc., 1911 94 St. NW, Edmonton, AB T6N, Canada;Nanochip, Inc, United States;IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 2010

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Abstract

We have demonstrated a MEMS memory device utilizing an array of cantilevered AFM probe tips fabricated directly on standard CMOS, and integrated with a ferroelectric media on a movable platform by wafer bonding. The MEMS process uses low-temperature poly-SiGe to fabricate cantilevers with sub-100nm tips and suspended metallization to connect the tips to read-write circuitry in the CMOS. The probe tip array interfaces with a single-crystal PZT media film upon which data densities on the order of Tb/in^2 have been demonstrated. The mover is actuated electromagnetically with100 micron stroke and sub-nm position sensing. The cantilever, mover and cap wafers are integrated using AuSn solder-based wafer bonding.