The modeling and parameters identification for IGBT based on optimization and simulation

  • Authors:

  • Yanxia Gao;Nan Li;Shuibao Guo;Haijian Liu

  • Affiliations:

  • Shanghai Key Laboratory of Power Station Automation Technology, Shanghai University, Shanghai, China;Shanghai Key Laboratory of Power Station Automation Technology, Shanghai University, Shanghai, China;Shanghai Key Laboratory of Power Station Automation Technology, Shanghai University, Shanghai, China;Shanghai Key Laboratory of Power Station Automation Technology, Shanghai University, Shanghai, China

  • Venue:
  • LSMS'07 Proceedings of the Life system modeling and simulation 2007 international conference on Bio-Inspired computational intelligence and applications
  • Year:
  • 2007

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Abstract

IGBT(Insulated Gate Bipolar Transistor)is becoming more and more popular in many power applications, since it offers a good compromise between on-state loss, switching loss and easy of use. To develop circuits and systems with the devices, model and model parameters are necessary in circuit simulations. This paper presents a procedure for identifying the most important model parameters of IGBT. As an example, the results of identification for BUP302 are given.