RF power amplifier modeling for three-port applications using polynomials with IIR bases functions

Authors:
Mir Masood;Claudio Rey;Steve Kenney;George Norris;Rick Sherman
Affiliations:
Georgia Tech, Atlanta, GA;Freescale Semiconductor, Tempe, AZ;Georgia Tech, Atlanta, GA;Freescale Semiconductor, Tempe, AZ;Freescale Semiconductor, Tempe, AZ
Venue:
RWS'10 Proceedings of the 2010 IEEE conference on Radio and wireless symposium
Year:
2010

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RF power amplifier modeling using polynomials with IIR bases functions

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Abstract

This paper presents a scheme of modeling radio frequency (RF) power amplifier (PAs) for 3-port applications by including modeling of bias port of PA along with its input and output ports. This scheme uses polynomials with infinite impulse response (llR) bases functions for modeling non-linear behavior of PA as well as its short and long term memory effects. Power amplifiers designed for third generation (WCDMA) wireless system are investigated for the validation of modeling scheme. Excellent results are obtained, where the error between model prediction and measurements is better than 43 dBc for a wide range of bias voltages, with the amplifier being driven with a WCDMA signal at several power levels.