A V-band 90-nm CMOS low-noise amplifier with modified CPW transmission lines for UWB systems

Authors:
Ibrahim Haroun;Jim Wight;Calvin Plett;Aly Fathy;Yaun-Chai Hsu
Affiliations:
Carleton University, Ottawa, Canada and Communications Research Centre Canada;Carleton University, Ottawa, Canada;Carleton University, Ottawa, Canada;University of Tennessee, Knoxville;Chip Implementation Centre, Hsinchu, Taiwan
Venue:
RWS'10 Proceedings of the 2010 IEEE conference on Radio and wireless symposium
Year:
2010

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Abstract

A V-band low-noise, high gain, high linearity single-stage amplifier has been developed in a 90-nm CMOS technology. The design utilized modified co-planar waveguide transmission lines for the input/output matching networks, to avoid lines' width and spacing constraints and to sustain small chip area and low cost fabrication. The developed amplifier exhibited a low noise figure of 4.1 dB, and a gain higher than 10 dB in the frequency range of 57-58 GHz. Additionally, the amplifier has linear characteristics and its measured third-order intercept (IIP3) point is greater than 3 dBm. The proposed design is well suited for millimeter-wave (mmW) front-ends in ultra-wideband (UWB) radio-over-fiber (RoF) systems for high data-rate communications.