Yet another write-optimized DBMS layer for flash-based solid state storage

  • Authors:
  • Hongchan Roh;Daewook Lee;Sanghyun Park

  • Affiliations:
  • Yonsei University, Korea, South Korea;Yonsei University, South Korea;Yonsei University, South Korea

  • Venue:
  • CIKM '10 Proceedings of the 19th ACM international conference on Information and knowledge management
  • Year:
  • 2010

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Abstract

Flash-based Solid State Storage (flashSSS) has write-oriented problems such as low write throughput, and limited life-time. Especially, flashSSDs have a characteristic vulnerable to random-writes, due to its control logic utilizing parallelism between the flash memory chips. In this paper, we present a write-optimized layer of DBMSs to address the write-oriented problems of flashSSS in on-line transaction processing environments. The layer consists of a write-optimized buffer, a corresponding log space, and an in-memory mapping table, closely associated with a novel logging scheme called InCremental Logging (ICL). The ICL scheme enables DBMSs to reduce page-writes at the least expense of additional page-reads, while replacing random-writes into sequential-writes. Through experiments, our approach demonstrated up-to an order of magnitude performance enhancement in I/O processing time compared to the original DBMS, increasing the longevity of flashSSS by approximately a factor of two.