A $$3\,\hbox{nV}/{\sqrt{\hbox{Hz}}}$$ rail-to-rail operational amplifier in silicon-on-sapphire with constant transconductance

Authors:
Pujitha Weerakoon;Frederick J. Sigworth;Peter J. Kindlmann;Eugenio Culurciello
Affiliations:
School of Engineering and Applied Science, Yale University, New Haven, USA 06520;School of Engineering and Applied Science, Yale University, New Haven, USA 06520;School of Engineering and Applied Science, Yale University, New Haven, USA 06520;School of Engineering and Applied Science, Yale University, New Haven, USA 06520
Venue:
Analog Integrated Circuits and Signal Processing
Year:
2010

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Abstract

This paper presents the design, fabrication, and electrical measurement results from a low-noise high-performance amplifier fabricated in the 0.5 μm silicon-on-sapphire (SOS) technology. The amplifier was designed with rail-to-rail input and output swing and constant transconductance in its entire common-mode range and targets biomedical instrumentation in SOS/SOI technologies. The amplifier reports $$3\,\hbox{nV}/{\sqrt{\hbox{Hz}}}$$ of input-referred voltage noise at 10 kHz and has 0.4 mV of input-referred offset. The gain-bandwidth product of the amplifier is 12 MHz and the open-loop gain is 75 dB. The amplifier occupies 0.08 mm2 of area and consumes 1.4 mW of power.