Charge amplifier with an enhanced frequency response for SPM-based data storage

  • Authors:

  • Hyunjoong Lee;Jong-Kwan Woo;Hyo-Jin Nam;Won-Hyeog Jin;Moongi Jeong;Young-Sik Kim;Jin-Koog Shin;Suhwan Kim

  • Affiliations:

  • Department of Electrical Engineering, Seoul National University, Seoul, Korea;Department of Electrical Engineering, Seoul National University, Seoul, Korea;Micro System Group, Devices and Materials Laboratory, LG Electronics Advanced Research Institute, Seoul, Korea;Micro System Group, Devices and Materials Laboratory, LG Electronics Advanced Research Institute, Seoul, Korea;Micro System Group, Devices and Materials Laboratory, LG Electronics Advanced Research Institute, Seoul, Korea;Zephyr Logic Inc., Seoul, Korea;Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeonju, Korea;Department of Electrical Engineering, Seoul National University, Seoul, Korea

  • Venue:
  • IEEE Transactions on Circuits and Systems II: Express Briefs
  • Year:
  • 2010

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Abstract

Storage systems based on scanning probe microscopy incorporate an array of thermopiezoelectric cantilevers that require charge amplifiers with a wide frequency response but low power consumption. We use an improved frequency compensation method to enhance the in-band frequency response without requiring any additional power. Measurements show that the prototype chip draws the same 68 µA at 1.8 V as an unmodified design but has a closed-loop frequency response that is ten times greater. The chip was fabricated in a 0.18-µm standard CMOS process, and the charge amplifier core occupies 0.042 mm2.