A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device

  • Authors:

  • Z. Hamaizia;N. Sengouga;M. Missous;M. C. E. Yagoub

  • Affiliations:

  • Laboratoire des Matériaux Semiconducteurs et Métalliques, Université Med Khider, Biskra;Laboratoire des Matériaux Semiconducteurs et Métalliques, Université Med Khider, Biskra;Microelectronic & Nanostructure Group, School of Electronic and Electronic Eng., Manchester University;RF and Microwave Research Group, School of Information Technology and Engineering, University of Ottawa, Ottawa, Ontario, Canada

  • Venue:
  • CSS'10 Proceedings of the 4th international conference on Circuits, systems and signals
  • Year:
  • 2010

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Abstract

In this work, the design of a novel low noise amplifier (LNA) based on 1µm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radio astronomy applications, this amplifier exploits a common drain configuration as an input stage and a common source inductive degeneration topology as an output stage. It exhibits a maximum gain of 30 dB within an input 1- dB compression point of -16 dBm. The noise figure is 0.4 dB with an input return loss greater than -10 dB and an output return loss of - 12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply.