Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs

  • Authors:

  • Andrew R. Brown;Jeremy R. Watling;Gareth Roy;Craig Riddet;Craig L. Alexander;Urban Kovac;Antonio Martinez;Asen Asenov

  • Affiliations:

  • Dept. Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK G12 8LT;Dept. Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK G12 8LT;Dept. Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK G12 8LT;Dept. Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK G12 8LT;Dept. Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK G12 8LT;Dept. Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK G12 8LT;Dept. Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK G12 8LT;Dept. Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK G12 8LT

  • Venue:
  • Journal of Computational Electronics
  • Year:
  • 2010

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Abstract

With the scaling of field-effect transistors to the nanometre scale, it is well recognised that TCAD simulations of such devices need to account for quantum mechanical confinement effects. The most widely used method to incorporate quantum effects within classical and semi-classical simulators is via density gradient quantum corrections. Here we present our methodologies for including the density gradient method within our Drift-Diffusion and Monte Carlo simulators and highlight some of the additional benefits that this provides when dealing with the charge associated with random discrete dopants.