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Spatial variation of currents and fields due to localized scatterers in metallic conduction
IBM Journal of Research and Development
Calculation of phonon spectrum and thermal properties in suspended 〈100〉 InXGa1-XAs nanowires
Journal of Computational Electronics
Study of thermal properties of graphene-based structures using the force constant method
Journal of Computational Electronics
An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach
Journal of Computational Electronics
Efficient and realistic device modeling from atomic detail to the nanoscale
Journal of Computational Electronics
Journal of Computational Electronics
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The correct estimation of the thermal properties of ultra-scaled CMOS and thermoelectric semiconductor devices demands for accurate phonon modeling in such structures. This work provides a detailed description of the modified valence force field (MVFF) method to obtain the phonon dispersion in zinc-blende semiconductors. The model is extended from bulk to nanowires after incorporating proper boundary conditions. The computational demands by the phonon calculation increase rapidly as the wire cross-section size increases. It is shown that nanowire phonon spectra differ considerably from the bulk dispersions. This manifests itself in the form of different physical and thermal properties in these wires. We believe that this model and approach will prove beneficial in the understanding of the lattice dynamics in the next generation ultra-scaled semiconductor devices.