Embedded DRAM in 45-nm Technology and Beyond

  • Authors:
  • Darren Anand;Kevin Gorman;Mark Jacunski;Adrian Paparelli

  • Affiliations:
  • IBM, Essex Junction;IBM, Essex Junction;IBM, Essex Junction;IBM, Essex Junction

  • Venue:
  • IEEE Design & Test
  • Year:
  • 2011

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Abstract

Editor's note:As power and density requirements for embedded memories grow, products ranging from mobile applications to high-performance microprocessors are increasingly looking toward eDRAM as an alternative to SRAM. This article describes the state of the art in eDRAM architecture and design with a particular focus on test challenges and solutions.—Leland Chang, IBM T.J. Watson Research Center