A 1.3 ppm/°C BiCMOS bandgap voltage reference using piecewise-exponential compensation technique

  • Authors:

  • Xin Ming;Ying-Qian Ma;Ze-Kun Zhou;Bo Zhang;Yang Lu

  • Affiliations:

  • State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China 610054;State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China 610054;State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China 610054;State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China 610054;Electrical and Computer Engineering Department, Polytechnic Institute of New York University, Brooklyn, USA 11201

  • Venue:
  • Analog Integrated Circuits and Signal Processing
  • Year:
  • 2011

Quantified Score

Hi-index 0.00

Visualization

Abstract

A high-order curvature-compensated BiCMOS bandgap voltage reference using piecewise-exponential compensation technique is presented in this paper. The circuit utilizes a variable gain current mirror to realize exponential compensation as well as a common emitter amplifier with local feedback to achieve a second correction. Implemented in 0.5-μm BCD process, the proposed voltage reference consumes a supply current of 17.5聽μA at 2.5聽V. A temperature coefficient(TC) of 1.3聽ppm/掳C, PSRR of more than 76聽dB at low frequencies and a line regulation of 160聽ppm/V from 2.5 to 5聽V are easily achieved, which make it applied widely in portable equipments.