Design of transformer based CMOS active inductances

  • Authors:

  • G. Scandurra;C. Ciofi

  • Affiliations:

  • Dipartimento di Fisica della Materia e TFA, Università degli Studi di Messina, Messina, Italy;Dipartimento di Fisica della Materia e TFA, Università degli Studi di Messina, Messina, Italy

  • Venue:
  • MINO'06 Proceedings of the 5th WSEAS international conference on Microelectronics, nanoelectronics, optoelectronics
  • Year:
  • 2006

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Abstract

In this paper the design of a transformer based CMOS active inductance to be used for the realization of fully integrated RF CMOS front ends is discussed. The circuit topology employed aims at taking the maximum advantage of the limited transconductance gain of MOS devices for compensating the losses of the integrated magnetic structures. In this way, even if a 0.35 µm technology has been employed, it has been possible to obtain an equivalent "almost ideal" inductance of 6 nH at a center frequency of 2.4 GHz. The circuit operates with a supply voltage of 3.3 V and drives less than 1 mA. Moreover, two control voltages can be used in order to tune the maximum quality factor of the inductance and to change in a relatively wide range the frequency at which it occurs.