Measurement and model identification of semiconductor devices

  • Authors:
  • Josef Dobeš;Martin Grábner

  • Affiliations:
  • Department of Radio Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Praha 6, Czech Republic;Department of Radio Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Praha 6, Czech Republic

  • Venue:
  • AEE'05 Proceedings of the 4th WSEAS international conference on Applications of electrical engineering
  • Year:
  • 2005

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Abstract

Current models of semiconductor devices are very sophisticated, especially ones for BJT and MOSFET. The equations of such models contain typically one hundred parameters. Therefore, a measurement and particularly identification of full set of parameters is very difficult. In the paper, an optimization method is presented which is usable for identifications of even very complicated models with a relatively small number of iterations. The algorithm has been implemented into the original software tool called C.I.A. (Circuit Interactive Analyzer) into its static and dynamic analysis modes. Hence, the identification is able to identify both DC and capacitance models of semiconductor devices. The process is demonstrated in the paper using various transistors.