Hybrid numerical analysis of a high-speed non-volatile suspended gate silicon nanodot memory (SGSNM)

  • Authors:

  • Mario A. García-Ramírez;Yoshishige Tsuchiya;Hiroshi Mizuta

  • Affiliations:

  • Nano Group, School of Electronics and Computer Science, University of Southampton, Southampton, UK SO17 1BJ;Nano Group, School of Electronics and Computer Science, University of Southampton, Southampton, UK SO17 1BJ;Nano Group, School of Electronics and Computer Science, University of Southampton, Southampton, UK SO17 1BJ

  • Venue:
  • Journal of Computational Electronics
  • Year:
  • 2011

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Abstract

We present a hybrid numerical analysis of a high-speed and non-volatile suspended gate silicon nanodot memory (SGSNM) which co-integrates a nano-electromechanical (NEM) control gate with a MOSFET as a readout element and silicon nanodots as a floating gate. A hybrid NEM-MOS circuit simulation is developed by taking account of the pull-in/pull-out operation of the suspended gate and electron tunnelling processes through the tunnel oxide layer as behavioural models. The signals for programming, erasing and reading are successfully achieved at circuit level simulation. The programming and erasing times are found as short as 2.5 nsec for a SGSNM with a 1-μm-long suspended gate, which is a summation of the mechanical pull-in/pull-out times and the tunnel charging/discharging times.