Algorithm 745: computation of the complete and incomplete Fermi-Dirac integral
ACM Transactions on Mathematical Software (TOMS)
Journal of Computational Physics
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
| Hi-index | 0.00 |
Electronic band structure is incorporated into a versatile energy transport model that treats heat flow between mobile electron ensembles with the thermodynamic identity for ideal gases instead of an electron thermal conductivity. This alleviates the closure issue common to thermal conductivity models and is amenable to different forms of charge gas transport. This flexibility allows the model to accommodate band dispersions typical of semiconductors. A simulation scheme and the device equations for a generalized band structure are presented. The model is then implemented for GaAs using a band structure calculated with the empirical pseudopotential method. Comparisons to Monte Carlo for certain bulk GaAs test cases indicate that the model may capture hot electron effects with sufficient accuracy and reduced computational cost suitable for larger scale device simulation and design.