Physical and electrical characteristics of carbon nanotube network field-effect transistors synthesized by alcohol catalytic chemical vapor deposition

  • Authors:

  • Chin-Lung Cheng;Chien-Wei Liu;Bau-Tong Dai;Ming-Yen Lee

  • Affiliations:

  • Department of Electro-Optical Engineering, National Formosa University, Yunlin, Taiwan;Department of Mechanical Engineering, National Yunlin University of Science and Technology, Yunlin, Taiwan;National Nano Device Laboratories, National Applied Research Laboratories, Hsinchu, Taiwan;Institute of Materials Science and Green Energy Engineering, National Formosa University, Yunlin, Taiwan

  • Venue:
  • Journal of Nanomaterials
  • Year:
  • 2011

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Abstract

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5-7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2 as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage (Id-Vd), drain current versus gate voltage (Id-Vg), mobility, subthreshold slope (SS), and transconductance (Gm), were obtained.