Design, simulation, fabrication and characterization of a micro electromagnetic vibration energy harvester with sandwiched structure and air channel

Authors:
Peihong Wang;Huiting Liu;Xuhan Dai;Zhuoqing Yang;Zhongzhu Wang;Xiaolin Zhao
Affiliations:
School of Physics and Material Science, Anhui University, Hefei, 230039, China;School of Computer Science and Technology, Anhui University, Hefei 230039, China;Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;School of Physics and Material Science, Anhui University, Hefei, 230039, China;Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China
Venue:
Microelectronics Journal
Year:
2012

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Abstract

This paper presents the design, simulation, fabrication and characterization of a novel electromagnetic vibration energy harvester with sandwiched structure and air channel. It mainly consists of a top coil, a bottom coil, an NdFeB permanent magnet and a nickel planar spring integrated with silicon frame. The prototype is fabricated mainly using silicon micromachining and microelectroplating techniques. The tested natural frequency of the magnet-spring system is 228.2Hz. The comparison between the simulation and the tested results of the natural frequency shows that the Young's modulus of microelectroplated Ni film is about 163GPa rather than 210GPa of bulk Ni material. Experimental results indicate that the sandwiched structure and the air channel in the silicon frame of the prototype can make the induced voltage increase to 42%. The resonant frequency of the prototype at 8m/s^2 acceleration is 280.1Hz, which results from the nonlinear behavior of the magnet-spring system. The load voltage generated by the prototype is 162.5mV when the prototype is at resonance and the input vibration acceleration is 8m/s^2 and the maximal load power obtained is about 21.2@mW when the load resistance is 81@W.