Electronic states in three dimensional quantum dot/wetting layer structures

Authors:
Marta Markiewicz;Heinrich Voss
Affiliations:
Institute of Numerical Simulation, Hamburg University of Technology, Hamburg, Germany;Institute of Numerical Simulation, Hamburg University of Technology, Hamburg, Germany
Venue:
ICCSA'06 Proceedings of the 6th international conference on Computational Science and Its Applications - Volume Part I
Year:
2006

Citing 3
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Abstract

Although self-assembled quantum dots are grown on wetting layers, most simulations exclude the wetting layer. The neglected effects on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix are investigated based on the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and a finite height hard-wall 3D confinement potential. By comparing quantum dots with wetting layers and a dot without a wetting layer, we find that the presence of a wetting layer may effect the electronic structure essentially.