A model reduction approach for constructing compact dynamic thermal models of IGBT-modules of inverters

  • Authors:
  • J. Antonios;N. Ginot;C. Batard;Y. Scudeller;M. Machmoum

  • Affiliations:
  • Lunam University - University of Nantes, IREENA, CRTT, 37 Boulevard de l'Université, BP406, 44602, St-Nazaire cedex, France;Lunam University - University of Nantes, IETR, Rue Christian Pauc, BP 50609, 44306 Nantes cedex 3, France;Lunam University - University of Nantes, IETR, Rue Christian Pauc, BP 50609, 44306 Nantes cedex 3, France;Lunam University - University of Nantes, LGMPA, Rue Christian Pauc, BP 50609, 44306 Nantes cedex 3, France;Lunam University - University of Nantes, IREENA, CRTT, 37 Boulevard de l'Université, BP406, 44602, St-Nazaire cedex, France

  • Venue:
  • Microelectronics Journal
  • Year:
  • 2012

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Abstract

This paper presents a model reduction approach for constructing lumped RC thermal networks of IGBT-modules of inverters for which heat and subsequent temperature increases vary with time on different scales ranging from nanosecond to second. It was observed that the time-dependent heat and temperature profiles of transistors and diodes of IGBT-modules of inverters oscillate at two frequencies, one in the range 0.1-50Hz corresponding to the load current modulation, and the other in the range 1-20kHz corresponding to the switching frequency. The reduction approach consisted of decomposing the module into different elements, each being described with a number of RC cells selected according to the time-constant of the element with regard to the module. The lumped RC thermal networks were found in good agreement with the continuous model by offering a considerably lower computational time on the different time scales. For simplicity, the reduction approach is presented for one-dimensional heat flow through the cross-plane direction of the module.