Numerical approximation of Turing patterns in electrodeposition by ADI methods

  • Authors:
  • Ivonne Sgura;Benedetto Bozzini;Deborah Lacitignola

  • Affiliations:
  • Dipartimento di Matematica e Fisica "Ennio De Giorgi", Universití del Salento - Lecce, Via per Arnesano, I-73100 Lecce, Italy;Dipartimento di Ingegneria dell'Innovazione, Universití del Salento - Lecce, Via per Monteroni, I-73100 Lecce, Italy;Dipartimento di Ingegneria Elettrica e dell'Informazione, Universití di Cassino e del Lazio Meridionale, Via di Biasio, 43 I-03043 Cassino, Italy

  • Venue:
  • Journal of Computational and Applied Mathematics
  • Year:
  • 2012

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Abstract

In this paper we study the numerical approximation of Turing patterns corresponding to steady state solutions of a PDE system of reaction-diffusion equations modeling an electrodeposition process. We apply the Method of Lines (MOL) and describe the semi-discretization by high order finite differences in space given by the Extended Central Difference Formulas (ECDFs) that approximate Neumann boundary conditions (BCs) with the same accuracy. We introduce a test equation to describe the interplay between the diffusion and the reaction time scales. We present a stability analysis of a selection of time-integrators (IMEX 2-SBDF method, Crank-Nicolson (CN), Alternating Direction Implicit (ADI) method) for the test equation as well as for the Schnakenberg model, prototype of nonlinear reaction-diffusion systems with Turing patterns. Eventually, we apply the ADI-ECDF schemes to solve the electrodeposition model until the stationary patterns (spots & worms and only spots) are reached. We validate the model by comparison with experiments on Cu film growth by electrodeposition.