Global modeling of nonlinear circuits using the finite-difference Laguerre time-domain/alternative direction implicit finite-difference time-domain method with stability investigation

Authors:
R. Mirzavand;A. Abdipour;G. Moradi;M. Movahhedi
Affiliations:
Electrical Engineering Department, Amirkabir University of Technology (Tehran Polytechnic), Tehran,, 15914, Iran;Electrical Engineering Department, Amirkabir University of Technology (Tehran Polytechnic), Tehran,, 15914, Iran;Electrical Engineering Department, Amirkabir University of Technology (Tehran Polytechnic), Tehran,, 15914, Iran;Electrical Engineering Department, Shahid Bahonar University of Kerman, Kerman, Iran
Venue:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Year:
2012

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Abstract

This paper describes a new unconditionally stable numerical method for the full-wave physical modeling of semiconductor devices by a combination of the finite-difference Laguerre time-domain (FDLTD) and alternative direction implicit finite-difference time-domain (ADI-FDTD) approaches. The unconditionally stable method by using FDLTD scheme for the electromagnetic model and semi-implicit ADI-FDTD approach for the active model leads to a significant decrease in the full-wave simulation time. Numerical simulations of an example transistor and a power amplifier show the efficiency of presented method for the full-wave simulation of mm-wave active circuits. Copyright © 2012 John Wiley & Sons, Ltd.