Comments on “A small-signal MOSFET model for radio frequency IC applications”

Authors:
Suet Fong Tin;A. A. Osman;K. Mayaram
Affiliations:
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA;-;-
Venue:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Year:
2006

Citing 0
Cited 2

A Comparative Study of Various MOSFET Models at Radio Frequencies

Analog Integrated Circuits and Signal Processing
Metal-oxide-semiconductor field-effect transistors

RF and microwave semiconductor device handbook

Quantified Score

Hi-index	0.03

Visualization

Abstract

For original paper see E. Abou-Allam and T. Manku, ibid., vol.16, pp.437-47 (1997). A comparison is provided between the recent small-signal analysis for the distributed gate resistance in MOSFET's at RF frequencies and the lumped-element model of an earlier publication for various CMOS technologies. An improved lumped-element model is also proposed. It is demonstrated that simplified lumped-element circuits are adequate for modeling the effect of distributed gate resistance on both the y parameters and the thermal noise