A 24W Ku band GaN based power amplifier with 9.1dB linear gain

  • Authors:

  • W. J. Luo;X. J. Chen;L. Pang;T. T. Yuan;X. Y. Liu

  • Affiliations:

  • Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

  • Venue:
  • Microelectronics Journal
  • Year:
  • 2012

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Abstract

A Ku-band power amplifier is successfully developed with a single chip 4.8mm AlGaN/GaN high electron mobility transistors (HEMTs). The AlGaN/GaN HEMTs device, achieved by E-beam lithography @?-gate process, exhibited a gate-drain reverse breakdown voltage of larger than 100V, a cutoff frequency of f"T=30GHz and a maximum available gain of 13dB at 14GHz. The pulsed condition (100@ms pulse period and 10% duty cycle) was used to test the power characteristic of the power amplifier. At the frequency of 13.9GHz, the developed GaN HEMTs power amplifier delivers a 43.8dBm (24W) saturated output power with 9.1dB linear gain and 34.6% maximum power-added efficiency (PAE) with a drain voltage of 30V. To our best knowledge, it is the state-of-the-art result ever reported for internal-matched 4.8mm single chip GaN HEMTs power amplifier at Ku-band.