Design of sub-1-V CMOS bandgap reference circuit using only one BJT

Authors:
Abhirup Lahiri;Nitin Agarwal
Affiliations:
Analog Mixed Signal Group, STMicroelectronics, Greater Noida, India;Analog Mixed Signal Group, STMicroelectronics, Greater Noida, India
Venue:
Analog Integrated Circuits and Signal Processing
Year:
2012

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A low-impedance, sub-bandgap 0.6 μm CMOS reference with 0.84% trimless 3-σ accuracy and -30 dB worst-case PSRR up to 50 MHz

Analog Integrated Circuits and Signal Processing

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Abstract

This paper describes new CMOS bandgap reference (BGR) circuits capable of providing sub-1-V voltage reference while using only one BJT. The circuits use the concept of reverse bandgap voltage principle (RBVP) to generate attenuated versions of the silicon bandgap voltage of 1.205 V. Also, as opposed to the previously known sub-1-V BGR by Banba et al. (IEEE J Solid State Circuits 34:670---674, 1999), the circuits can be operated with lower supply voltage down to a 1.3 V supply. Based on the scheme, a 550 mV BGR is implemented in 65 nm CMOS process, with peak-to-peak variation of 7.19 mV across devices corners, temperature range of 驴20 to 80° and supply range of 1.6---2.0 V.