Resistive Programmable Through-Silicon Vias for Reconfigurable 3-D Fabrics

Authors:
Davide Sacchetto;Michael Zervas;Yuksel Temiz;Giovanni De Micheli;Yusuf Leblebici
Affiliations:
Laboratory of MicroElectronic Systems, Ecole Polytechnique Federale de Lausanne, Vaud, Switzerland;Laboratory of MicroElectronic Systems, Ecole Polytechnique Federale de Lausanne, Vaud, Switzerland;Laboratory of MicroElectronic Systems, Ecole Polytechnique Federale de Lausanne, Vaud, Switzerland;Laboratory of Systems Integration , Ecole Polytechnique Federale de Lausanne, Vaud, Switzerland;Laboratory of MicroElectronic Systems, Ecole Polytechnique Federale de Lausanne, Vaud, Switzerland
Venue:
IEEE Transactions on Nanotechnology
Year:
2012

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Abstract

In this letter, we report on the fabrication and characterization of titanium dioxide ( ${\rm TiO}_2$)-based resistive RAM (ReRAM) cointegration with $380\, \mu {\rm m}$-height Cu through-silicon via (TSV) arrays for programmable 3-D interconnects. Nonvolatile resistive switching of ${\rm Pt/TiO_2/Pt}$ thin films is first characterized with a resistance ratio up to five orders of magnitude. Then, cointegration of ${\rm Pt/TiO_2/Pt}$ or ${\rm Pt/TiO_2}$ memory cells on ${\rm 140}$ and $60\, \mu {\rm m}$ diameter Cu TSVs is fabricated. Repeatable nonvolatile bipolar switching of the ReRAM cells is demonstrated for different structures.