Handbook of Applied Cryptography
Handbook of Applied Cryptography
Low-leakage asymmetric-cell SRAM
Proceedings of the 2002 international symposium on Low power electronics and design
Silicon physical random functions
Proceedings of the 9th ACM conference on Computer and communications security
Physical unclonable functions for device authentication and secret key generation
Proceedings of the 44th annual Design Automation Conference
FPGA Intrinsic PUFs and Their Use for IP Protection
CHES '07 Proceedings of the 9th international workshop on Cryptographic Hardware and Embedded Systems
Soft decision helper data algorithm for SRAM PUFs
ISIT'09 Proceedings of the 2009 IEEE international conference on Symposium on Information Theory - Volume 3
A practical device authentication scheme using SRAM PUFs
TRUST'11 Proceedings of the 4th international conference on Trust and trustworthy computing
On the effectiveness of the remanence decay side-channel to clone memory-based PUFs
CHES'13 Proceedings of the 15th international conference on Cryptographic Hardware and Embedded Systems
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The contamination of electronic component supply chains by counterfeit hardware devices is a serious and growing risk in today's globalized marketplace. Current best practice for detecting counterfeit semiconductors includes visual checking, electrical testing, and reliability testing, all of which require significant investments in expertise, equipment, and time. In TRUST'11, Koeberl, Li, Rajan, Vishik, and Wu proposed a new device authentication scheme using SRAM Physically Unclonable Functions (PUFs) for semiconductor anti-counterfeiting. Their authentication scheme is simple, low cost, and practical. However, the method and corresponding parameters of their scheme are based on a theoretical SRAM PUF model without support from real experimental data. In this paper, we evaluate a real SRAM PUF on a discrete 0.13um SRAM, and use the PUF result to evaluate this device authentication scheme and show that this scheme indeed works well. We identify several gaps between the theoretical model and the experimental SRAM PUF result, and adjust the parameters of the scheme accordingly. In addition, we provide a new post-processing function that results in a smaller false rejection rate and false acceptance rate.