An ultra-low power RF interface for wireless-implantable microsystems

Authors:
Mehdi Lotfi Navaii;Mohsen Jalali;Hamed Sadjedi
Affiliations:
Electrical and Computer Engineering Department, Shahed University, P. O. Box 18155-159, Tehran, 3319118651, Iran;Electrical and Computer Engineering Department, Shahed University, P. O. Box 18155-159, Tehran, 3319118651, Iran;Electrical and Computer Engineering Department, Shahed University, P. O. Box 18155-159, Tehran, 3319118651, Iran
Venue:
Microelectronics Journal
Year:
2012

Citing 3
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Abstract

This paper presents an efficient radio frequency (RF) front-end for power and data telemetry in biomedical implantable devices. The fully integrated system includes amplitude shift keying (ASK) demodulator, low drop out (LDO) power regulator, full wave voltage rectifier and limiter circuit. The demodulator utilizes a new ultra low power envelope amplifier that removes the need for any voltage comparator or Schmitt trigger circuit. With a carrier frequency of 12MHz and 1Mbps data rate, the proposed ASK demodulator achieves a modulation index range from 5% up to 100% while consuming less than 35@mW from induced power. The regulator can provide a maximum stimulation current of 1.2mA under a ripple suppressed 3.3V supply. Designed in a 0.18@mm CMOS process, the system totally draws about 35@mA excluding the stimulation current.