Simulated annealing and Boltzmann machines: a stochastic approach to combinatorial optimization and neural computing
Spatial tessellations: concepts and applications of Voronoi diagrams
Spatial tessellations: concepts and applications of Voronoi diagrams
How to solve it: modern heuristics
How to solve it: modern heuristics
A simulated annealing approach with probability matrix for semiconductor dynamic scheduling problem
Expert Systems with Applications: An International Journal
Network optimization algorithms and scenarios in the context of automatic mapping
Computers & Geosciences
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Deposition of silicon dioxide (SiO"2) is a critical step of integrated circuit manufacturing; hence it is monitored during the manufacturing process at a grid of points defined on the wafer area. Since collecting thickness measurements is expensive, it is a compelling issue to investigate how a sub grid can be identified. A strategy based on spatial prediction and simulating annealing is proposed to tackle the problem which proved to be effective when applied to a real process. A diagnostic device for monitoring the deposition process is also discussed which can be usefully adopted in the day-to-day activity by practitioners acting in process control of a microelectronics fab.