Properties of Hopfield model with the zero-order synaptic decay

Authors:
Ryota Miyata;Toru Aonishi;Jun Tsuzurugi;Koji Kurata
Affiliations:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan 226-8502;Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan 226-8502;Faculty of Engineering, Okayama University of Science, Okayama, Japan 700-0005;Faculty of Engineering, University of the Ryukyus, Okinawa, Japan 903-0213
Venue:
Artificial Life and Robotics
Year:
2012

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Abstract

In this paper, we investigate the effect of synaptogenesis on memories in the brain, using the abstract-associative memory model, Hopfield model with the zero-order synaptic decay. Using the numerical simulation, we demonstrate the possibility that synaptogenesis plays a role in maintaining recent memories embedded in the network while avoiding overloading. For the network consisting of 1000 units, it turned out that the minimum decay rate to avoid overloading is 0.02, and the optimal decay rate to maximize the storage capacity is 0.08. We also show that the average numbers of replacement synapses at each learning step corresponding to these two values are 1187 and 21024, respectively.