A 6.2 mW 0.024 mm2 fully-passive RF downconverter with 12 dB gain enhancement using MOS parametric amplification

  • Authors:

  • J. R. Custódio;I. Bastos;L. B. Oliveira;J. P. Oliveira;P. Pereira;J. Goes;E. Bruun

  • Affiliations:

  • Faculty of Sciences and Technology (FCT), Centre for Technology and Systems (CTS of Uninova), Universidade Nova de Lisboa (UNL), Lisbon, Portugal;Faculty of Sciences and Technology (FCT), Centre for Technology and Systems (CTS of Uninova), Universidade Nova de Lisboa (UNL), Lisbon, Portugal;Faculty of Sciences and Technology (FCT), Centre for Technology and Systems (CTS of Uninova), Universidade Nova de Lisboa (UNL), Lisbon, Portugal;Faculty of Sciences and Technology (FCT), Centre for Technology and Systems (CTS of Uninova), Universidade Nova de Lisboa (UNL), Lisbon, Portugal;Instituto Politécnico de Castelo Branco (IPCB), INESC-ID, Lisboa, Portugal;Faculty of Sciences and Technology (FCT), Centre for Technology and Systems (CTS of Uninova), Universidade Nova de Lisboa (UNL), Lisbon, Portugal;Department of Electrical Engineering, Technical University of Denmark (DTU), Lyngby, Denmark 2800

  • Venue:
  • Analog Integrated Circuits and Signal Processing
  • Year:
  • 2013

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Abstract

This paper describes a fully-passive discrete-time switched-capacitor RF downconverter with an on-chip oscillator, that combines quadrature mixing and harmonic rejection, designed in a 130 nm digital CMOS technology. By using MOS capacitors (varactors) to perform parametric amplification, it is possible to achieve a measured gain enhancement of about 12 dB, together with 21 dB noise figure and more than 5 dBm IIP3. Operating in the VHF-III band, the downconverter core dissipates 6.2 mW and occupies 0.024 mm2.